At this year’s IEEE International Electron Devices Meeting (Dec. 7-11, 2019), imec reported an in-depth study of scaled transistors with MoS2 and demonstrated best device performance to date for such materials. MoS2 is a 2D material, meaning that it can be grown in stable form with nearly atomic thickness and atomic precision. Imec synthesized the material down to monolayer (0.6nm thickness) and fabricated devices with scaled contact and channel length, as small as 13nm and 30nm respectively. ...